MMBT5551 Fairchild Semiconductor, MMBT5551 Datasheet - Page 4

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MMBT5551

Manufacturer Part Number
MMBT5551
Description
TRANSISTOR NPN 160V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT5551

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
350mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
160V
Collector-base Voltage
180V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
80
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5551FSTR

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2N5551 / MMBT5551 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
260
240
220
200
180
160
700
600
500
400
300
200
100
0
0.1
0
with Resistance Between Emitter-Base
SOT-23
Figure 7. Power Dissipation
Between Emitter-Base
25
1
vs Ambient Temperature
RESISTANCE (k )
TEMPERATURE ( C)
50
TO-92
10
75
Ω
100
o
I
C
100
= 1.0 mA
125
1000
150
4
16
12
8
4
0
Figure 8. Small Signal Current Gain
1
FREG = 20 MHz
V
CE
= 10V
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
vs Collector Current
10
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