MMBT5551 Fairchild Semiconductor, MMBT5551 Datasheet - Page 2

• Manufacturer Part Number: MMBT5551
• Description: TRANSISTOR NPN 160V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5551

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 160V
• Collector-base Voltage: 180V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 80
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5551FSTR

2N5551 / MMBT5551 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Off Characteristics
On Characteristics
Small Signal Characteristics
Symbol
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
C
I
I
CE(sat)
BE(sat)
C
h
CBO
EBO
H
NF
f
obo
FE
ibo
T
fe
Collector-Emitter Breakdown Voltage * I
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
Parameter
T
A
= 25°C unless otherwise noted
I
I
V
V
V
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
I
R
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
BE
S
= 10uA, I
= 1.0mA, I
= 100μA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 10mA, I
= 50mA, I
= 10mA, I
= 50mA, I
= 10mA, V
= 1.0 mA, V
= 250 uA, V
=1.0 kΩ, f=10 Hz to 15.7 kHz
= 4.0V, I
= 10V, I
= 0.5V, I
= 120V, I
= 120V, I
2
Test Condition
C
E
B
B
B
B
B
C
C
E
CE
CE
CE
= 0
E
E
CE
= 0, f = 1.0MHz
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
CE
CE
= 0
= 0
= 0
= 0, f = 1.0MHz
= 0
= 0, T
= 5.0V
= 5.0V
= 10V,
= 5.0V
= 5.0 V,
= 10 V, f = 1.0kHz
A
= 100°C
Min.
160
180
100
6.0
80
80
30
50
Max.
0.15
0.20
250
250
1.0
1.0
6.0
8.0
50
50
50
20
www.fairchildsemi.com
Units
MHz
nA
μA
nA
dB
pF
pF
V
V
V
V
V
V
V