MMBT2907A Fairchild Semiconductor, MMBT2907A Datasheet - Page 2

• Manufacturer Part Number: MMBT2907A
• Description: TRANSISTOR GP PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2907A

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 800mA
• Dc Current Gain (min): 100
• Power Dissipation: 350mW
• Frequency (max): 200MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MMBT2907AFSTR

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
V
V
I
I
I
h
V
V
f
C
C
t
t
t
t
t
t
Symbol
B
CEX
CBO
on
d
r
off
s
f
T
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
obo
ibo
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Spice Model
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Parameter
T
A
= 25°C unless otherwise noted
I
I
I
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 100 kHz
V
f = 100 kHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
I
B1
B1
CB
CE
CB
CB
CB
EB
CC
CC
= 10 mA, I
= 10 A, I
= 10 A, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 50 mA, V
= I
= 15 mA
= 30 V, V
= 30 V, V
= 50 V, I
= 50 V, I
= 10 V, I
= 2.0 V, I
= 30 V, I
= 6.0 V, I
Test Conditions
B2
= 15 mA
E
C
B
E
E
E
C
C
C
EB
BE
CE
CE
= 0
B
B
B
B
= 0
CE
CE
= 0
= 0
= 0, T
= 0,
= 150 mA,
CE
CE
= 0,
= 150 mA
= 15 mA
= 50 mA
= 15 mA*
= 50 mA
= 10 V
= 20 V,
= 0.5 V
= 0.5 V
= 10 V
= 10 V
PNP General Purpose Amplifier
= 10 V*
= 10 V*
A
= 150 C
Min
100
100
100
200
5.0
60
60
75
50
Max
0.02
300
100
0.4
1.6
1.3
2.6
8.0
50
50
20
30
45
10
40
80
30
(continued)
Units
MHz
nA
nA
pF
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A