MMBT2907A Fairchild Semiconductor, MMBT2907A Datasheet

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MMBT2907A

Manufacturer Part Number
MMBT2907A
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN2907ATA.pdf (7 pages)

Specifications of MMBT2907A

Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
800mA
Dc Current Gain (min)
100
Power Dissipation
350mW
Frequency (max)
200MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.6 A
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT2907AFSTR

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1998 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
D
Symbol
C
JC
JA
J
CEO
CBO
EBO
Thermal Characteristics
Absolute Maximum Ratings*
, T
*
*
**
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
stg
B
PN2907A
E
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
A
MMBT2907A
= 25°C unless otherwise noted
SOT-23
Mark: 2F
T
C
A
= 25°C unless otherwise noted
PN2907A
B
83.3
625
200
5.0
E
*MMBT2907A
2
.
Max
350
357
2.8
-55 to +150
Value
PZT2907A
SOT-223
800
5.0
60
60
C
**PZT2907A
1,000
125
8.0
B
Units
C
mA
V
V
V
C
mW/ C
Units
E
mW
C/W
C/W

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MMBT2907A Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ** Device mounted on FR-4 PCB 1.5 mm; mounting pad for the collector lead min 1998 Fairchild Semiconductor Corporation MMBT2907A SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A PN2907A *MMBT2907A 625 5.0 83.3 200 PZT2907A SOT-223 Value Units 5.0 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current B I Collector Cutoff Current CEX I Collector Cutoff Current CBO ON CHARACTERISTICS h DC ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Switching Times vs Collector Current 250 200 150 100 100 I - COLLECTOR ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics 0.5 0.2 0 COLLECTOR CURRENT (mA) C Common Emitter Characteristics 1 -10mA 1.4 V 1.3 1.2 1.1 h ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PNP General Purpose Amplifier 1 1.5 V ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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