BSV52 Fairchild Semiconductor, BSV52 Datasheet - Page 6

• Manufacturer Part Number: BSV52
• Description: TRANSISTOR NPN 12V 200MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSV52

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 400MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 400 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSV52; BSV52TR

0
Test Circuits
V
- 10
Pulse generator
V
Source Impedance = 50
PW
Duty Cycle
IN
Pulse generator
V
Source Impedance = 50
PW
Duty Cycle
0
IN
IN
Rise Time
Rise Time
300 ns
300 ns
t
on
2%
2%
1 ns
1 ns
V
IN
t
V
V
on
BB
IN
= + 15.25 V
= - 3.0 V
V
FIGURE 1: Charge Storage Time Measurement Circuit
OUT
10%
90%
V
IN
56
V
IN
FIGURE 2: t
0.0023 F
0.1 F
11 V
50
0.0023 F
3.3 K
'A'
+
500
500
V
BB
10 F
ON
3.3 K
0.05
0.1
, t
OFF
F
F
Measurement Circuit
10 F
890
0.05
0.1
220
F
F
10 V
+
0.1 F
0.0023 F
91
V
50
0.0023 F
CC
= 3.0 V
1 K
NPN Switching Transistor
V
OUT
V
OUT
0
+6V
- 4V
V
0
IN
V
OUT
To sampling oscilloscope input
impedance = 50
Rise Time 1 ns
t
t
s
off
10% Pulse waveform
at point ' A'
(continued)
10%
t
V
V
off
BB
IN
= - 20.9 V
= 12 V
10%
90%
V
OUT
3