BSV52 Fairchild Semiconductor, BSV52 Datasheet
BSV52
Specifications of BSV52
BSV52TR
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BSV52 Summary of contents
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... Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 200 mA -55 to +150 C Max Units *BSV52 225 mW 1.8 mW/ C 556 C/W ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CES V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) Base-Emitter ...
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Typical Characteristics DC Current Gain vs Collector Current 200 150 125 ° C 100 25 ° °C 0.01 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector ...
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Typical Characteristics Output Capacitance vs Reverse Bias Voltage ibo 3 C obo 0.1 0 REVERSE BIAS VOLTAGE (V) Switching Times vs Ambient Temperature ...
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Typical Characteristics Fall Time vs Turn On and Turn Off Base Currents - 3 7 ...
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Test Circuits V 0 Pulse generator V Rise Time 1 ns 0.0023 F IN Source Impedance = 50 PW 300 ns Duty Cycle FIGURE 1: Charge Storage Time Measurement ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...