MMBT5550 Fairchild Semiconductor, MMBT5550 Datasheet - Page 4

• Manufacturer Part Number: MMBT5550
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5550

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 140V
• Collector-base Voltage: 160V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 60
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Performance Characteristics
(Continued)
Figure 7. Power Dissipation vs
Ambient Temperature
500
400
300
200
100
0
0
25
50
75
100
125
150
0
TEMPERATURE(
C)
4
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MMBT5550 Rev. A