MMBT5550 Fairchild Semiconductor, MMBT5550 Datasheet - Page 3

• Manufacturer Part Number: MMBT5550
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5550

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 140V
• Collector-base Voltage: 160V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 60
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MMBT5550 Rev. A
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
Figure 3. Base-Emitter Saturation Voltage
Figure 5. Collector Cutoff Current
250
200
150
100
1.0
0.8
0.6
0.4
0.2
0.0
50
0
0.1
50
10
1
1
25
β
V
0.2
CE
= 10
V = 100V
vs Collector Current
vs Collector Current
vs Ambient Temperature
= 5V
CB
I
I
C
C
T - AMBIE NT TEMP ERATURE ( C)
0.5
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
A
50
125
1
25
- 40
o
o
-40
C
C
10
2
o
o
C
C
25
75
o
C
5
125
10
o
C
100
20
°
100
50
125
200
100
3
Figure 2. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 6. Input and Output Capacitance
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
30
25
20
15
10
5
0
0.1
β
vs Collector Current
vs Collector Current
vs Reverse Voltaget
= 10
I
I
C
- 40
C
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
V
CE
o
C
125
1
- COLLECTOR VOLTAGE (V)
1
o
C
25
10
o
C
125
10
C
25
10
o
ib
C
f = 1.0 MHz
o
C
- 40
V
o
CE
C
www.fairchildsemi.com
100
= 5V
C
100
cb
100