BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 8

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
2002 Sep 06
handbook, halfpage
MMIC wideband amplifier
Z
(1) I
(2) I
(3) I
Fig.13 Noise figure as a function of frequency;
O
(dB)
= 50 
NF
5.5
5.3
5.1
4.9
4.7
4.5
S
S
S
= 10.6 mA; V
= 14.6 mA; V
= 18.7 mA; V
0
typical values.
S
S
S
= 2.7 V.
= 3 V.
= 3.3 V.
1000
(2)
(1)
(3)
2000
f (MHz)
MLD916
3000
8
handbook, halfpage
I
Fig.14 Stability factor as a function of frequency;
S
= 14.6 mA; V
12
K
8
4
0
0
typical values.
S
= 3 V; P
1000
D
= 30 dBm; Z
2000
O
= 50 
Product specification
3000
BGM1012
f (MHz)
MLD917
4000