BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 2

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
FEATURES
 Internally matched to 50 
 Very wide frequency range (4 GHz at 3 dB bandwidth)
 Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
 10 dBm saturated output power at 1 GHz
 High linearity (18 dBm IP3
 Low current (14.6 mA)
 Unconditionally stable.
APPLICATIONS
 LNB IF amplifiers
 Cable systems
 ISM
 General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
2002 Sep 06
V
I
s
NF
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
S
SYMBOL
S
L(sat)
MMIC wideband amplifier
21

2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
PARAMETER
(out)
at 1 GHz)
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
2
PINNING
CONDITIONS
Marking code: C2-.
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
3
14.6
20.1
4.8
9.7
TYP.
6
Product specification
4
4




BGM1012
MAX.
1
2, 5
3
V
mA
dB
dB
dBm
UNIT