BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 3

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2002 Sep 06
V
I
P
T
T
P
R
S
SYMBOL
SYMBOL
stg
j
S
tot
D
MMIC wideband amplifier
th j-s
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
thermal resistance from junction to
solder point
PARAMETER
PARAMETER
RF input AC coupled
T
P
s
tot
3
 90 C
= 200 mW; T
CONDITIONS
CONDITIONS
s
 90 C



65


MIN.
Product specification
4
50
200
+150
150
10
VALUE
BGM1012
MAX.
300
V
mA
mW
C
C
dBm
UNIT
UNIT
K/W