BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 4

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
CHARACTERISTICS
V
2002 Sep 06
I
s
R
R
s
NF
BW
K
P
P
IP3
IP3
S
S
SYMBOL
L(sat)
L 1 dB
MMIC wideband amplifier
L IN
L OUT
21
12
= 3 V; I
(in)
(out)


2
2
S
= 14.6 mA; T
supply current
insertion power gain
return losses input
return losses output
isolation
noise figure
bandwidth
stability factor
saturated load power
load power
input intercept point
output intercept point
PARAMETER
j
= 25 C; unless otherwise specified.
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at s
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
21

2
3 dB below flat gain at 1 GHz 3.1
CONDITIONS
4
11
19
19
19
19
18
16
9
13
11
10
30
35


1.5
3
8
3.5
4
1.5
4
9
16
11
MIN.
14.6
19.5
20.1
20.4
20.4
19.9
18.7
11
15
14
13
33
38
4.8
4.9
3.6
2.1
3.4
9.7
5.6
6.0
3.4
2
7
18
13
TYP.
Product specification
20
5.3
19
21
21
22
21
20






5.1











BGM1012
MAX.
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz


dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
UNIT