BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 7

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
2002 Sep 06
handbook, halfpage
handbook, halfpage
MMIC wideband amplifier
I
Fig.9
f = 1 GHz; Z
(1) V
(2) V
(3) V
Fig.11 Load power as a function of drive power at
S
s 12
(dBm)
(dB)
= 14.6 mA; V
P L
−10
−20
−30
−40
−50
−10
−20
20
10
2
0
S
S
S
0
−40
= 3.3 V.
= 3 V.
= 2.7 V.
0
Isolation (s
typical values.
1 GHz; typical values.
O
= 50 
S
= 3 V; P
1000
−30
D
12
= 30 dBm; Z

2
) as a function of frequency;
2000
−20
O
= 50 
(1)
(3)
3000
−10
(2)
P D (dBm)
f (MHz)
MLD912
MLD914
4000
0
7
handbook, halfpage
handbook, halfpage
P
(1) I
(2) I
(3) I
Fig.10 Insertion gain (s
f = 2.2 GHz; Z
(1) V
(2) V
(3) V
Fig.12 Load power as a function of drive power at
(dBm)
D
s 21
(dB)
P L
= 30 dBm; Z
−10
−20
20
10
25
20
15
10
S
S
S
S
S
S
2
0
= 18.7 mA; V
= 14.6 mA; V
= 10.6 mA; V
−40
= 3.3 V.
= 3 V.
= 2.7 V.
0
frequency; typical values.
2.2 GHz; typical values.
O
= 50 
O
1000
= 50 
−30
S
S
S
= 3.3 V.
= 3 V.
= 2.7 V.
2000
−20
21

2
) as a function of
(1)
(3)
Product specification
3000
−10
BGM1012
(2)
P D (dBm)
(1)
f (MHz)
(2)
(3)
MLD913
MLD915
4000
0