BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 6

RF Amplifier TAPE-7 MMIC-RFSS

BGM1012 T/R

Manufacturer Part Number
BGM1012 T/R
Description
RF Amplifier TAPE-7 MMIC-RFSS
Manufacturer
NXP Semiconductors
Type
General Purpose Wideband Amplifierr
Datasheet

Specifications of BGM1012 T/R

Operating Frequency
1 GHz
Noise Figure
4.8 dB
Bandwidth
3600 MHz
Operating Supply Voltage
3 V
Supply Current
14.6 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGM1012,115
NXP Semiconductors
2002 Sep 06
handbook, full pagewidth
handbook, full pagewidth
MMIC wideband amplifier
I
I
S
S
= 14.6 mA; V
= 14.6 mA; V
S
S
= 3 V; P
= 3 V; P
D
D
= 30 dBm; Z
= 30 dBm; Z
180°
180°
Fig.8 Output reflection coefficient (s
Fig.7 Input reflection coefficient (s
O
O
0
0
= 50 
= 50 
−135°
−135°
+0.2
−0.2
+0.2
−0.2
135°
135°
0.2
0.2
+0.5
−0.5
+0.5
−0.5
0.5
0.5
4 GHz
4 GHz
−90°
−90°
90°
90°
+1
−1
+1
−1
1
6
100 MHz
100 MHz
2
2
11
22
); typical values.
); typical values.
+2
−2
+2
−2
5
5
−45°
−45°
45°
45°
+5
−5
+5
−5
MLD910
MLD911
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BGM1012

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