BGM1012 T/R NXP Semiconductors, BGM1012 T/R Datasheet - Page 6

• Manufacturer Part Number: BGM1012 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFSS
• Manufacturer: NXP Semiconductors
• Type: General Purpose Wideband Amplifierr

Specifications of BGM1012 T/R

• Operating Frequency: 1 GHz
• Noise Figure: 4.8 dB
• Bandwidth: 3600 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 14.6 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGM1012,115

NXP Semiconductors
2002 Sep 06
handbook, full pagewidth
handbook, full pagewidth
MMIC wideband amplifier
I
I
S
S
= 14.6 mA; V
= 14.6 mA; V
S
S
= 3 V; P
= 3 V; P
D
D
= 30 dBm; Z
= 30 dBm; Z
180°
180°
Fig.8 Output reflection coefficient (s
Fig.7 Input reflection coefficient (s
O
O
0
0
= 50 
= 50 
−135°
−135°
+0.2
−0.2
+0.2
−0.2
135°
135°
0.2
0.2
+0.5
−0.5
+0.5
−0.5
0.5
0.5
4 GHz
4 GHz
−90°
−90°
90°
90°
+1
−1
+1
−1
1
6
100 MHz
100 MHz
2
2
11
22
); typical values.
); typical values.
+2
−2
+2
−2
5
5
−45°
−45°
45°
45°
+5
−5
+5
−5
MLD910
MLD911
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BGM1012