BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 6

• Manufacturer Part Number: BGA 777L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Low Power Single Bandr

Specifications of BGA 777L7 E6327

• Operating Frequency: 2650 MHz
• P1db: 4 dBm
• Noise Figure: 1.2 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 10 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: TSLP-7-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA777L7E6327XT

2
2.1
Table 1
Parameter
Supply voltage
Supply current
Pin voltage
Pin voltage RF Input Pin
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
2.2
Table 2
Parameter
Thermal resistance junction
to soldering point
2.3
Table 3
Parameter
ESD hardness HBM
1) According to JESD22-A114
Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
Thermal Resistance
Thermal Resistance
ESD Integrity
ESD Integrity
1)
Symbol
V
I
V
V
P
T
T
T
Symbol
R
Symbol
V
CC
j
A
stg
CC
PIN
RFIN
RFIN
thJS
ESD-HBM
Values
Min.
-0.3
-0.3
-0.3
-30
-65
Value
240
Value (typ.)
2000
BGA777L7 - Low Power Single-Band UMTS LNA
6
Max.
3.6
10
V
0.9
4
150
85
150
CC
+ 0.3
Unit
V
mA
V
V
dBm
°C
°C
°C
Unit
K/W
Unit
V
Absolute Maximum Ratings
Note / Test Conditions
Note / Test Conditions
All pins
Note / Test Condition
All pins except RF input pin
Electrical Characteristics
V3.0, 2009-07-02