BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 16
![RF Amplifier RF SILICON MMIC](/photos/16/1/160116/tslp-7-1_sml.jpg)
BGA 777L7 E6327
Manufacturer Part Number
BGA 777L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Low Power Single Bandr
Datasheet
1.BGA_777L7_E6327.pdf
(24 pages)
Specifications of BGA 777L7 E6327
Operating Frequency
2650 MHz
P1db
4 dBm
Noise Figure
1.2 dB
Operating Supply Voltage
2.8 V
Supply Current
10 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSLP-7-1
Minimum Operating Temperature
- 30 C
Other names
BGA777L7E6327XT
2.15
V
Power Gain
Noise Figure
Data Sheet
CC
= 2.8 V,
10
−10
−40
9
8
7
6
5
4
−5
−6
−7
−8
−9
−40
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
V
|S
GS
NF
−20
21
−20
| = f (
= 0 V,
= f (
0
T
T
0
A
A
V
)
)
EN
20
T
20
A
T
= 2.8 V,
A
[°C]
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
[°C]
40
40
60
f
= 2650 MHz
60
80
80
100
100
BGA777L7 - Low Power Single-Band UMTS LNA
Input Compression
16
Supply Current
−10
−2
−4
−6
−8
0.65
0.55
0.45
0.35
−40
0.7
0.6
0.5
0.4
0.3
4
2
0
−40
−20
−20
I
CC
P1dB
= f (
0
0
= f (
T
20
T
A
20
)
A
T
T
Electrical Characteristics
A
[°C]
A
[°C]
40
)
40
60
60
V3.0, 2009-07-02
80
80
100
100