BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 11

RF Amplifier RF SILICON MMIC

BGA 777L7 E6327

Manufacturer Part Number
BGA 777L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Low Power Single Bandr
Datasheet

Specifications of BGA 777L7 E6327

Operating Frequency
2650 MHz
P1db
4 dBm
Noise Figure
1.2 dB
Operating Supply Voltage
2.8 V
Supply Current
10 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSLP-7-1
Minimum Operating Temperature
- 30 C
Other names
BGA777L7E6327XT
2.11
Table 9
Parameter
Pass band range band I
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
P
1) Performance based on application circuit in Figure 4 on page 19
2) Verified based on AQL; not 100% tested in production
3) Guaranteed by device design; not tested in production
Data Sheet
f
1
f1
- f
= P
2
= 1 MHz
f2
= -37 dBm
2)
Measured RF Characteristics UMTS Band 40
Typical Characteristics 2300 MHz Band T
3)
2)
2)
2)
2)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
2300
BGA777L7 - Low Power Single-Band UMTS LNA
11
Typ.
4.2
0.5
16.8
-7.2
-35
-7
1.2
7.0
-23
-12
-15
-12
>2.3
-11
-2
-2
8
A
Values
= 25 °C,
Measured RF Characteristics UMTS Band 40
Max.
2400
V
CC
= 2.8 V
Unit
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
1)
Electrical Characteristics
Note / Test Condition
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
DC to 10 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
V3.0, 2009-07-02

Related parts for BGA 777L7 E6327