BGA 777L7 E6327 Infineon Technologies, BGA 777L7 E6327 Datasheet - Page 5
![RF Amplifier RF SILICON MMIC](/photos/16/1/160116/tslp-7-1_sml.jpg)
BGA 777L7 E6327
Manufacturer Part Number
BGA 777L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Low Power Single Bandr
Datasheet
1.BGA_777L7_E6327.pdf
(24 pages)
Specifications of BGA 777L7 E6327
Operating Frequency
2650 MHz
P1db
4 dBm
Noise Figure
1.2 dB
Operating Supply Voltage
2.8 V
Supply Current
10 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSLP-7-1
Minimum Operating Temperature
- 30 C
Other names
BGA777L7E6327XT
1
The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1
leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging
of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD
protection on-chip as well as matching off chip.
Features
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Figure 1
Type
BGA777L7
Data Sheet
Gain: 16 / -7 dB in high / low gain mode
Noise figure: 1.2 dB in high gain mode
Supply current: 4.2 / 0.5 mA in high / low gain mode
Standby mode (< 2 µA typ.)
Inputs pre-matched to 50 Ω
2 kV HBM ESD protection
Low external component count
Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)
Pb-free (RoHS compliant) package
Description
Block diagram of single-band LNA
Package
TSLP-7-1
BGA777L7 - Low Power Single-Band UMTS LNA
B7
Marking
5
TSLP-7-1 package
Chip
T1531
V3.0, 2009-07-02
Description