PN2369A Fairchild Semiconductor, PN2369A Datasheet - Page 5

• Manufacturer Part Number: PN2369A
• Description: TRANSISTOR SWITCHING NPN HS TO92
• Manufacturer: Fairchild Semiconductor

Specifications of PN2369A

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
50
10
1
0
-6
-5
-4
-3
-2
-1
-30
-25
-20
-15
-10
0
-5
1
0
0
0
V
10 ns
Current and Collector Current
t = 2.0 ns
CC
r
V
t = 2.0 ns
I = 10 mA
Rise Time vs. Turn On Base
5.0 ns
I = 100 mA
C
CC
V
f
C
and Turn Off Base Currents
and Turn Off Base Currents
CC
= 3.0 V
= 3.0 V
I
= 3.0 V
B1
I
I - COLLE CTOR CURRENT (mA)
5
B1
C
Fall Time vs Turn On
2
Fall Time vs Turn On
t = 7.0 ns
- TURN ON BASE CURRENT (mA)
- TURN ON BASE CURRENT (mA)
f
10
10
4
15
3.0 ns
20 ns
6
20
100
(continued)
4.0 ns
8
8.0 ns
25
10 ns
12.0 ns
8.0 ns
500
10
30
-6
-5
-4
-3
-2
-1
500
400
300
200
100
0
-12
-10
- 8
- 6
- 4
- 2
1
0
0
Voltage and Turn On Base Current
0
0
Delay Time vs Base-Emitter OFF
t = 8.0 ns
V
I = 10 mA
d
C
CC
I = 30 mA
V
t = 2.0 ns
SOT-23
and Turn Off Base Currents
TO-92
CC
C
f
= 3.0 V
I
2
25
I
B1
= 3.0 V
Ambient Temperature
Power Dissipation vs
2
B1
Fall Time vs Turn On
- TURN ON BASE CURRENT (mA)
NPN Switching Transistor
- TURN ON BASE CURRENT (mA)
TE MPE RATURE ( C)
50
4
5
75
6
5.0 ns
3.0 ns
10
100
°
8
4.0 ns
20
4.0 ns
5.0 ns
125
10
3.0 ns
(continued)
150
12
50