PN2369A Fairchild Semiconductor, PN2369A Datasheet - Page 2

• Manufacturer Part Number: PN2369A
• Description: TRANSISTOR SWITCHING NPN HS TO92
• Manufacturer: Fairchild Semiconductor

Specifications of PN2369A

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

h
V
V
OFF CHARACTERISTICS
V
V
V
V
I
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
C
C
h
SMALL SIGNAL CHARACTERISTICS
t
t
t
Symbol
CBO
FE
s
on
off
CE(
BE(
fe
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
obo
ibo
Electrical Characteristics
*
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
sat
sat
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
)
)
DC Current Gain*
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Storage Time
Turn-On Time
Turn-Off Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
C
C
C
C
C
C
C
C
C
C
C
C
V
V
I
R
I
V
V
C
C
C
E
C
B1
I
I
B1
B1
CB
CB
CB
EB
G
CC
CC
= 10 mA, V
= 100 mA, V
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA,V
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 A, I
= 10 mA, I
= 10 A, V
= 10 A, I
= 10 mA, V
= I
= 2.0 k , f = 100 MHz
= 3.0 mA
= 3.0 mA, I
= 20 V, I
= 20 V, I
= 5.0 V, I
= 0.5 V, I
= 3.0 V, I
= 3.0 V, I
B2
Test Conditions
= I
C
C
E
B
B
B
B
= 10 mA
B
E
E
B
B
B
BE
CE
E
C
CE
C
C
CE
= 0
= 0
B
B
= 0
= 1.0 mA
= 3.0 mA
= 1.0 mA
= 3.0 mA
= 0
= 0, T
CE
= 1.0 mA,T
= 1.0 mA,T
= 1.0 mA,T
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
B2
= 10 mA,
= 10 mA,
= 0
= 10 mA
= 10 mA
= 0.35 V,T
= 10 V,
= 1.0 V
= 1.5 mA
= 1.0 V
A
= 125 C
NPN Switching Transistor
A
A
A
A
= 125 C
=125 C
= -55 C
=-55 C
Min
0.59
4.5
5.0
15
40
40
0.7
40
20
20
Max
0.25
0.85
1.02
1.15
0.4
120
4.0
5.0
30
0.2
0.3
0.5
1.6
13
12
18
(continued)
Units
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A