MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 8

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MT48H16M16LFBF-75:H TR

Manufacturer Part Number
MT48H16M16LFBF-75:H TR
Description
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H TR

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|6 ns
Operating Temperature
0 to 70 °C
General Description
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
The 256Mb Mobile LPSDR is a high-speed CMOS, dynamic random-access memory con-
taining 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchro-
nous interface (all signals are registered on the positive edge of the clock signal, CLK).
Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16
bits. Each of the x32’s 67,108,864-bit banks is organized as 4096 rows by 512 columns by
32 bits.
Note:
1. Throughout the data sheet, various figures and text refer to DQs as DQ. DQ should be
interpreted as any and all DQ collectively, unless specifically stated otherwise. Addition-
ally, the x16 is divided into two bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DQM refers to LDQM. For the upper byte (DQ[15:8]), DQM refers to
UDQM. The x32 is divided into four bytes. For DQ[7:0], DQM refers to DQM0. For
DQ[15:8], DQM refers to DQM1. For DQ[23:16], DQM refers to DQM2, and for
DQ[31:24], DQM refers to DQM3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all requirements.
3. Any specific requirement takes precedence over a general statement.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
General Description
©2008 Micron Technology, Inc. All rights reserved.

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