MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 60

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MT48H16M16LFBF-75:H TR

Manufacturer Part Number
MT48H16M16LFBF-75:H TR
Description
DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H16M16LFBF-75:H TR

Package
54VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|6 ns
Operating Temperature
0 to 70 °C
Figure 31: Terminating a WRITE Burst
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
Command
Address
1. DQM is LOW.
CLK
DQ
Transitioning data
WRITE
Bank,
Col n
T0
D
IN
TERMINATE
BURST
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T1
60
COMMAND
Address
Data
Don’t Care
T2
NEXT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation

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