MT48H16M16LFBF-75:H TR Micron Technology Inc, MT48H16M16LFBF-75:H TR Datasheet - Page 68

• Manufacturer Part Number: MT48H16M16LFBF-75:H TR
• Description: DRAM Chip Mobile SDRAM 256M-Bit 16Mx16 1.8V 54-Pin VFBGA T/R
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M16LFBF-75:H TR

• Package: 54VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: 0 to 70 °C

Figure 38: READ Without Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Bank
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
Column m
T2
Bank
READ
t CMH
t CH
CL = 2
T3
NOP
t LZ
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t AC
68
T4
NOP
D
OUT
t OH
t AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
D
NOP
OUT
t OH
t AC
PRECHARGE
Single bank
All banks
Bank(s)
T6
D
OUT
t OH
t RP
PRECHARGE Operation
t AC
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T7
NOP
D
OUT
t OH
t HZ
Don’t Care
T8
ACTIVE
Row
Bank
Row
Undefined