MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 62

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 26: Nominal Slew Rate for
Figure 27: Tangent Line for
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
REF(DC)
V
V
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
CK#
DDQ
REF(DC)
V
CK
V
t
SS
CK#
IH
DDQ
V
CK
SS
=
DC to V
DC to V
Tangent line (V
region
t
region
IH
REF
REF
REF[DC]
Nominal
slew rate
ΔTR
t IS
t IS
Tangent
line
- V
IL[DC]max
t IH
t IH
62
)
ΔTR
Hold slew rate
falling signal
ΔTR
Nominal
line
Micron Technology, Inc. reserves the right to change products or specifications without notice.
=
Tangent line (V
t IS
Nominal
slew rate
Tangent
DC to V
DC to V
t IS
line
region
region
2Gb: x4, x8, x16 DDR2 SDRAM
t IH
REF
REF
t IH
IH[DC]min
ΔTF
ΔTF
Nominal
Input Slew Rate Derating
line
ΔTF
- V
REF[DC]
)
© 2006 Micron Technology, Inc. All rights reserved.