MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 31

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Table 11: DDR2 I
Notes 1–7 apply to the entire table
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Parameter/Condition
Operating one bank active-precharge
current:
t
MIN (I
valid commands; Address bus inputs are
switching; Data bus inputs are switching
Operating one bank active-read-pre-
charge current:
Iout = 0mA; BL = 4, CL = CL (I
=
(I
HIGH between valid commands; Address bus
inputs are switching; Data pattern is same as
I
Precharge power-down current: All banks
idle;
trol and address bus inputs are stable; Data
bus inputs are floating
Precharge quiet standby current: All
banks idle;
HIGH; Other control and address bus inputs
are stable; Data bus inputs are floating
Precharge standby current: All banks idle;
t
er control and address bus inputs are switch-
ing; Data bus inputs are switching
Active power-down current: All banks
open;
trol and address bus inputs are stable; Data
bus inputs are floating
Active standby current: All banks open;
t
t
valid commands; Other control and address
bus inputs are switching; Data bus inputs are
switching
Operating burst write current: All banks
open, continuous burst writes; BL = 4, CL =
CL (I
MAX (I
HIGH between valid commands; Address bus
inputs are switching; Data bus inputs are
switching
CK =
DD4W
CK =
CK =
RP (I
DD
t
CK (I
),
DD
t
DD
t
CK =
t
t
t
DD
RCD =
t
CK (I
CK (I
CK (I
), AL = 0;
DD
CK =
DD
); CKE is HIGH, CS# is HIGH between
); CKE is HIGH, CS# is HIGH between
),
),
t
DD
DD
DD
t
t
CK (I
t
RP =
RC =
CK =
t
t
CK (I
); CKE is HIGH, CS# is HIGH; Oth-
),
RCD (I
),
t
t
RC =
RAS =
DD
t
CK =
t
t
t
DD
RP (I
RC (I
CK (I
); CKE is LOW; Other con-
DD
DD
); CKE is LOW; Other con-
t
RC (I
DD
); CKE is HIGH, CS# is
t
DD
DD
t
CK (I
Specifications and Conditions (Die Revision C)
RAS MAX (I
); CKE is HIGH, CS# is
),
); CKE is HIGH, CS# is
DD
t
RAS =
DD
),
DD
),
t
RAS =
), AL = 0;
t
RAS =
t
RAS MIN
DD
),
t
RAS
t
t
RAS
RP =
t
CK
Symbol Configuration -187E -25E
I
I
I
I
I
I
I
DD4W
DD3Pf
DD3Ps
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
Slow PDN exit
Fast PDN exit
MR[12] = 0
MR[12] = 1
x4, x8, x16
31
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
Electrical Specifications – I
x16
x16
x16
x16
x16
x16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2Gb: x4, x8, x16 DDR2 SDRAM
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-25
© 2006 Micron Technology, Inc. All rights reserved.
-3E/
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-3
DD
-37E
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Parameters
-5E
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Units
mA
mA
mA
mA
mA
mA
mA
mA