MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 13

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 4: Functional Block Diagram – 256 Meg x 8
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
BA0–BA2
A0–A14,
RAS#
CAS#
WE#
ODT
CKE
CK#
CS#
CK
18
Address
register
registers
Mode
Control
logic
18
counter
Refresh
15
10
3
15
address
Row-
MUX
2
15
control
Bank
logic
Column-
counter/
address
latch
decoder
address
Bank 0
row-
latch
and
Bank 1
Bank 2
Bank 3
Bank 4
8
2
32,768
Bank 5
Bank 6
Bank 7
DM mask logic
(32,768 x 256 x 32)
I/O gating
Memory array
Sense amplifers
decoder
Column
8,192
(x32)
256
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
13
Bank 7
COL0, COL1
CK,CK#
32
32
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Read
latch
CK out
drivers
Write
CK in
FIFO
and
8
8
8
8
COL0, COL1
Mask
Data
4
32
MUX
2Gb: x4, x8, x16 DDR2 SDRAM
generator
2
2
2
2
8
8
8
8
DQS
registers
Input
Data
Functional Block Diagrams
8
UDQS, UDQS#
LDQS, LDQS#
2
2
2
2
8
8
8
8
CK, CK#
2
8
2
DRVRS
2
DLL
RCVRS
© 2006 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
VddQ
DQ0–DQ7
DQS, DQS#
RDQS#
RDQS
DM