MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 24

• Manufacturer Part Number: MT47H256M8EB-25E:C
• Description: 256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-25E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
V
Output leakage current; 0V ≤ V
and ODT disabled
V
DD
DDQ
DDL
DD
REF
; all other balls not under test = 0V)
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 25), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 26) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7. For designs that are expected to last several years and require the flexi-
bility to use several designs, consider using final target theta values, rather than existing
values, to account for larger thermal impedances.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
REF
≤ V
DD
REF
specification is not exceeded. In applications where the device’s ambient temper-
, V
level
DDQ
≤ 0.6 x V
IN
DDQ
≤
; DQ
, and V
DDQ
V
; however, V
Symbol
DDL
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
I
must be within 300mV of each other at all times; this is not re-
DD
I
OUT
Electrical Specifications – Absolute Ratings
24
REF
may be ≥ V
Min
–1.0
–0.5
–0.5
–0.5
–5
–5
–2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DDQ
2Gb: x4, x8, x16 DDR2 SDRAM
provided that V
DDQ
Max
2.3
2.3
2.3
2.3
5
5
2
.
© 2006 Micron Technology, Inc. All rights reserved.
Units
REF
µA
µA
µA
V
V
V
V
≤ 300mV.
Notes
1, 2
1
1
3