MT47H256M8EB-25E:C Micron Technology Inc, MT47H256M8EB-25E:C Datasheet - Page 46
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MT47H256M8EB-25E:C
Manufacturer Part Number
MT47H256M8EB-25E:C
Description
256MX8 DDR2 SDRAM PLASTIC GREEN FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H256M8EB-25EC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E:C
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
2G (256M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
ATT
Quantity:
400
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
12 208
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
BGA
Quantity:
11 350
Company:
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H256M8EB-25E:C
Manufacturer:
MICRON
Quantity:
20 000
Input Electrical Characteristics and Operating Conditions
Table 15: Input DC Logic Levels
All voltages are referenced to V
Table 16: Input AC Logic Levels
All voltages are referenced to V
Figure 13: Single-Ended Input Signal Levels
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 56).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Symbol
V
V
IH(DC)
IL(DC)
46
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
REF(DC)
–300
Min
+ 125
2Gb: x4, x8, x16 DDR2 SDRAM
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
© 2006 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV