BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 6

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistor
I
Fig.6
I
Fig.8
C re
(pF)
C
c
G UM
= 45 mA; V
= i
(dB)
0.8
0.6
0.4
0.2
c
60
40
20
0
1
0
= 0; f = 1 MHz.
40
0
Feedback capacitance as a function of
collector-emitter voltage.
Maximum unilateral power gain as a
function of frequency.
CE
= 10 V.
4
400
8
f (MHz)
12
V CE (V)
MBB792
MBB791
4000
16
6
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.7
I
Fig.9
c
CE
G UM
T f
(dB)
= 20 mA; V
= 10 V; f = 1 GHz.
40
30
20
10
4
8
6
2
0
0
10
0
Transition frequency as a function of
collector current.
Maximum unilateral power gain as a
function of frequency.
CE
= 8 V.
10
10
2
20
10
3
Product specification
30
f (MHz)
I
C
(mA)
MCD089
MBB793
BFG94
10
40
4