BFG 196 E6327 Infineon Technologies, BFG 196 E6327 Datasheet
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BFG 196 E6327
Specifications of BFG 196 E6327
BFG196E6327XT
SP000010995
Related parts for BFG 196 E6327
BFG 196 E6327 Summary of contents
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NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from Power amplifier for DECT and PCN systems f = 7.5 GHz, ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 900 mW 700 600 500 400 300 200 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...
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Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...