BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 2

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
FEATURES
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
QUICK REFERENCE DATA
Note
1. T
September 1995
V
V
I
P
C
f
G
V
P
SYMBOL
C
T
High power gain
Low noise figure
Low intermodulation distortion
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
O
L1
re
NPN 6 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
output voltage
output power at 1 dB gain
compression
PARAMETER
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
T
T
d
I
T
open emitter
open base
up to T
I
I
I
I
f = 800 MHz; T
C
C
C
C
C
im
amb
amb
amb
= 0; V
= 45 mA; V
= 45 mA; V
= 45 mA; V
= 45 mA; V
DESCRIPTION
= 60 dB; R
= 25 C
= 25 C
= 25 C
2
s
= 140 C (note 1)
CE
CONDITIONS
= 10 V; f = 1 MHz
CE
CE
CE
CE
amb
L
= 10 V; f = 1 GHz;
= 10 V; f = 1 GHz;
= 10 V;
= 10 V; f = 1 GHz;
= 75 ;
= 25 C
page
Top view
4
11.5
MIN. TYP. MAX. UNIT
Fig.1 SOT223.
1
Product specification
6
13.5
500
21.5
2
15
12
60
700
0.8
BFG94
4
MSB002 - 1
3
V
V
mA
mW
pF
GHz
dB
mV
dBm