BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 5

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
September 1995
handbook, halfpage
NPN 6 GHz wideband transistor
V BB
L1 = L3 = 5 H micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2
input
75
(mW)
P tot
800
600
400
200
0
0
Test circuit for second and third order
intermodulation distortion.
1 nF
Fig.4 Power derating curve.
L1
50
2 pF
10 k
33
247
100
L2
1 nF
L3
150
DUT
33
T s ( C)
1 nF
MBB790
200
MBB780
output
75
V CC
5
handbook, halfpage
Fig.3
V
Fig.5
FIXTURE
CE
TEST
DUT
h FE
= 10 V; T
120
80
40
0
0
Measurement set-up for third order
intercept point and 1 dB gain compression.
DC current gain as a function of collector
current.
j
= 25 C
OUTPUT SLUG TUNER
INPUT SLUG TUNER
10
20
Product specification
BIAS
BIAS
TEE
TEE
I
C
(mA)
MCD087
BFG94
MBB789
output
input
30