BFG94,115 NXP Semiconductors, BFG94,115 Datasheet

TRANS NPN 10V 60MA SOT223

BFG94,115

Manufacturer Part Number
BFG94,115
Description
TRANS NPN 10V 60MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BFG94115.pdf (13 pages)

Specifications of BFG94,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
2.7dB ~ 3dB @ 500MHz ~ 1GHz
Power - Max
700mW
Dc Current Gain (hfe) (min) @ Ic, Vce
45 @ 30mA, 5V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
45
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
4000 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.06 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934002270115
BFG94 T/R
BFG94 T/R
Product specification
File under Discrete Semiconductors, SC14
DATA SHEET
BFG94
NPN 6 GHz wideband transistor
DISCRETE SEMICONDUCTORS
September 1995

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BFG94,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 ...

Page 2

Philips Semiconductors NPN 6 GHz wideband transistor FEATURES High power gain Low noise figure Low intermodulation distortion Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope primarily intended for use in communication and ...

Page 3

Philips Semiconductors NPN 6 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I DC collector current C P total power ...

Page 4

Philips Semiconductors NPN 6 GHz wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance re ...

Page 5

Philips Semiconductors NPN 6 GHz wideband transistor 247 1 nF input micro-choke turn copper wire (0.4 mm), internal diameter 4 mm. ...

Page 6

Philips Semiconductors NPN 6 GHz wideband transistor 1 handbook, halfpage C re (pF) 0.8 0.6 0.4 0 MHz Fig.6 Feedback capacitance as a function of collector-emitter ...

Page 7

Philips Semiconductors NPN 6 GHz wideband transistor 20 handbook, halfpage G max (dB mA Fig.10 Maximum available stable gain as a function of frequency. ...

Page 8

Philips Semiconductors NPN 6 GHz wideband transistor 4 handbook, halfpage F (dB Fig.14 Minimum noise figure as a function of collector current. September 1995 MCD094 GHz ...

Page 9

Philips Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth 500 MHz handbook, full pagewidth 0 0 ...

Page 10

Philips Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth + j – mA Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 ...

Page 11

Philips Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth 180 mA Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth – ...

Page 12

Philips Semiconductors NPN 6 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT 1.8 ...

Page 13

Philips Semiconductors NPN 6 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

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