BFG94,115 NXP Semiconductors, BFG94,115 Datasheet - Page 10

• Manufacturer Part Number: BFG94,115
• Description: TRANS NPN 10V 60MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG94,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 2.7dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 45 @ 30mA, 5V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 45
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.06 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934002270115; BFG94 T/R; BFG94 T/R

Philips Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 6 GHz wideband transistor
I
Z
I
C
C
O
= 45 mA; V
= 45 mA; V
= 50 .
CE
CE
= 10 V.
= 10 V.
Fig.18 Common emitter forward transmission coefficient (S
180
+ j
– j
Fig.17 Common emitter input reflection coefficient (S
0
150
0.5
10
10
150
0.4
10
25
25
0.3
120
120
0.2
25
0.1
3 GHz
40 MHz
90
10
90
50
50
50
40 MHz
100
3 GHz
60
60
250
100
100
MBB784
MBB786
30
30
11
250
250
).
0
21
).
Product specification
BFG94