BFG35,115 NXP Semiconductors, BFG35,115 Datasheet - Page 8

• Manufacturer Part Number: BFG35,115
• Description: TRANS NPN 10V 150MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG35,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 18V
• Transistor Type: NPN
• Frequency - Transition: 4GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V
• Dc Current Gain Hfe Max: 25 @ 100mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 18 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919910115::BFG35 T/R::BFG35 T/R

NXP Semiconductors
1999 Aug 24
handbook, halfpage
NPN 4 GHz wideband transistor
(dB)
V
Fig.12 Second order intermodulation distortion as
d
CE
2
= 10 V; V
45
50
55
60
65
70
20
a function of collector current.
o
= 50 dBmV; f
40
60
(p+q)
= 810 MHz; T
80
amb
100
= 25 C.
I
C
MBB384
(mA)
120
8
Product specification
BFG35