BFG35,115 NXP Semiconductors, BFG35,115 Datasheet - Page 10

• Manufacturer Part Number: BFG35,115
• Description: TRANS NPN 10V 150MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG35,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 18V
• Transistor Type: NPN
• Frequency - Transition: 4GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V
• Dc Current Gain Hfe Max: 25 @ 100mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 18 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919910115::BFG35 T/R::BFG35 T/R

NXP Semiconductors
1999 Aug 24
handbook, full pagewidth
handbook, full pagewidth
NPN 4 GHz wideband transistor
I
I
C
C
= 100 mA; V
= 100 mA; V
CE
CE
= 10 V; T
= 10 V; T
amb
amb
= 25 C.
= 25 C; Z
+ j
– j
Fig.15 Common emitter reverse transmission coefficient (S
180 o
Fig.16 Common emitter output reflection coefficient (S
0
150 o
10
10
150 o
o
= 50 .
10
25
25
120 o
120 o
25
0
90 o
90 o
50
50
50
10
0.1
0.2
100
0.3 0.4 0.5
60 o
60 o
3 GHz
250
100
100
MBB379
MBB285
30 o
30 o
0.6
250
250
22
0 o
).
12
).
Product specification
BFG35