BFG35,115 NXP Semiconductors, BFG35,115 Datasheet - Page 2

• Manufacturer Part Number: BFG35,115
• Description: TRANS NPN 10V 150MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG35,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 18V
• Transistor Type: NPN
• Frequency - Transition: 4GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V
• Dc Current Gain Hfe Max: 25 @ 100mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 18 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919910115::BFG35 T/R::BFG35 T/R

NXP Semiconductors
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
1999 Aug 24
V
I
P
h
f
G
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
stg
j
CEO
tot
o
CBO
CEO
EBO
tot
NPN 4 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain I
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
1
2
3
4
PIN
open base
up to T
I
open emitter
open base
open collector
up to T
I
f = 500 MHz; T
f = 500 MHz; T
I
f = 800 MHz; T
I
d
f
C
C
C
C
C
(p+qr)
im
= 100 mA; V
= 100 mA; V
= 100 mA; V
= 100 mA; V
= 100 mA; V
emitter
base
emitter
collector
= 60 dB; R
= 793.25 MHz; T
s
s
= 135 C (note 1)
= 135 C (note 1)
DESCRIPTION
CONDITIONS
2
CE
CE
amb
CE
amb
CE
amb
CE
CONDITIONS
L
= 75 ;
= 10 V; T
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
= 25 C
amb
j
= 25 C
= 25 C
lfpage



25




MIN.
Top view
Fig.1 SOT223.



70
4
15
11
750





65

1
MIN.
TYP.
Product specification
18
150
1





25
18
2
150
1
+150
175
MAX.
MAX.
2
BFG35
4
MSB002 - 1
V
mA
W
GHz
dB
dB
mV
V
V
V
mA
W
C
C
UNIT
UNIT
3