BFG35,115 NXP Semiconductors, BFG35,115 Datasheet - Page 6

• Manufacturer Part Number: BFG35,115
• Description: TRANS NPN 10V 150MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG35,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 18V
• Transistor Type: NPN
• Frequency - Transition: 4GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V
• Dc Current Gain Hfe Max: 25 @ 100mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 18 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.15 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919910115::BFG35 T/R::BFG35 T/R

NXP Semiconductors
1999 Aug 24
handbook, halfpage
handbook, halfpage
P tot
NPN 4 GHz wideband transistor
(W)
I
Fig.6
E
(pF)
C re
= 0; f = 1 MHz; T
1.2
1.0
0.8
0.6
0.4
0.2
0
3
2
1
0
0
0
Feedback capacitance as a function of
collector-emitter voltage.
Fig.4 Power derating curve.
4
j
50
= 25 C.
8
100
12
150
16
T
s
V
CE
MBB336
MBB381
( C)
o
(V)
200
20
6
handbook, halfpage
handbook, halfpage
(GHz)
V
Fig.5
V
Fig.7
h
CE
CE
T f
FE
120
= 10 V; T
= 10 V; f = 500 MHz; T
80
40
4
0
8
6
2
0
0
0
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
j
= 25 C.
40
40
j
= 25 C
80
80
Product specification
120
120
I
I
C
C
MBB361
(mA)
MBB357
(mA)
BFG35
160
160