BFG35,115 NXP Semiconductors, BFG35,115 Datasheet

TRANS NPN 10V 150MA SOT223

BFG35,115

Manufacturer Part Number
BFG35,115
Description
TRANS NPN 10V 150MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG35,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
1W
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
18V
Transistor Type
NPN
Frequency - Transition
4GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 100mA, 10V
Dc Current Gain Hfe Max
25 @ 100mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
4000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
18 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.15 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933919910115::BFG35 T/R::BFG35 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFG35,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product specification
Supersedes data of 1995 Sep 12
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1999 Aug 24

Related parts for BFG35,115

BFG35,115 Summary of contents

Page 1

DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 DISCRETE SEMICONDUCTORS 1999 Aug 24 ...

Page 2

... NXP Semiconductors NPN 4 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-emitter voltage CEO I DC collector current C P total power dissipation ...

Page 3

... NXP Semiconductors NPN 4 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance ...

Page 4

... NXP Semiconductors NPN 4 GHz wideband transistor handbook, full pagewidth input Ω 75 List of components (see test circuit) DESIGNATION DESCRIPTION C1, C3, C5, C6 multilayer ceramic capacitor C2, C7 multilayer ceramic capacitor C4 (note 1) miniature ceramic plate capacitor L1 microstrip line L2 microstrip line L3 (note 1) 1.5 turns 0.4 mm copper wire ...

Page 5

... NXP Semiconductors NPN 4 GHz wideband transistor handbook, full pagewidth Ω 75 input handbook, full pagewidth handbook, full pagewidth 1999 Aug Fig.3 Intermodulation test circuit printed circuit board. 5 Product specification Ω output C7 MBB299 60 mm MBB298 MBB297 BFG35 ...

Page 6

... NXP Semiconductors NPN 4 GHz wideband transistor 1.2 handbook, halfpage P tot (W) 1.0 0.8 0.6 0.4 0 100 Fig.4 Power derating curve. 3 handbook, halfpage C re (pF  MHz Fig.6 Feedback capacitance as a function of collector-emitter voltage. 1999 Aug 24 MBB336 handbook, halfpage 150 200 MBB381 handbook, halfpage ...

Page 7

... NXP Semiconductors NPN 4 GHz wideband transistor 40 handbook, halfpage G UM (dB  100 mA amb Fig.8 Maximum unilateral power gain as a function of frequency. 45 handbook, halfpage d im (dB 750 mV 793.25 MHz (p+qr) Fig.10 Intermodulation distortion as a function of collector current. 1999 Aug 24 MBB386 handbook, halfpage (MHz) ...

Page 8

... NXP Semiconductors NPN 4 GHz wideband transistor 45 handbook, halfpage d 2 (dB dBmV 810 MHz (p+q) Fig.12 Second order intermodulation distortion as a function of collector current. 1999 Aug 24 MBB384 80 100 120 I (mA C. amb 8 Product specification BFG35 ...

Page 9

... NXP Semiconductors NPN 4 GHz wideband transistor handbook, full pagewidth + j –  100 mA amb Fig.13 Common emitter input reflection coefficient (S handbook, full pagewidth 180  100 mA amb Fig.14 Common emitter forward transmission coefficient (S 1999 Aug GHz  120 o 150 150 o 120 100 ...

Page 10

... NXP Semiconductors NPN 4 GHz wideband transistor handbook, full pagewidth 180  100 mA amb Fig.15 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j –  100 mA amb Fig.16 Common emitter output reflection coefficient (S 1999 Aug 120 o 150 o 0.1 150 o 120  0.2 ...

Page 11

... NXP Semiconductors NPN 4 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Aug scale 0.32 6.7 3.7 7.3 4.6 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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