BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet - Page 9

• Manufacturer Part Number: BFR93AW,115
• Description: TRANS NPN 12V 35MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 35mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: NPN
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Noise Figure (db Typ @ F): 1.5dB @ 1GHz
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022950115::BFR93AW T/R::BFR93AW T/R

NXP Semiconductors
1995 Sep 18
handbook, full pagewidth
handbook, full pagewidth
V
NPN 5 GHz wideband transistor
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 30 mA; Z
= 30 mA.
o
Fig.16 Common emitter forward transmission coefficient (s
= 50 .
Fig.15 Common emitter input reflection coefficient (s
180
180
o
o
50
0
135
135
135
135
40
0.2
0.2
o
o
o
o
0.2
30
0.5
0.5
40 MHz
20
3 GHz
0.5
10
90
90
90
90
9
1
1
1
o
o
o
o
3 GHz
2
2
2
5
11
40 MHz
); typical values.
45
45
45
45
21
o
o
o
o
5
5
); typical values.
MGC898
MGC878
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR93AW