BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet

TRANS NPN 12V 35MA SOT-323

BFR93AW,115

Manufacturer Part Number
BFR93AW,115
Description
TRANS NPN 12V 35MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93AW,115

Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
35mA
Voltage - Collector Emitter Breakdown (max)
12V
Transistor Type
NPN
Frequency - Transition
5GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Noise Figure (db Typ @ F)
1.5dB @ 1GHz
Dc Current Gain Hfe Max
40 @ 30mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934022950115::BFR93AW T/R::BFR93AW T/R
Product specification
Supersedes data of November 1992
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 18

Related parts for BFR93AW,115

BFR93AW,115 Summary of contents

Page 1

DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 DISCRETE SEMICONDUCTORS 1995 Sep 18 ...

Page 2

... NXP Semiconductors NPN 5 GHz wideband transistor FEATURES  High power gain  Gold metallization ensures excellent reliability  SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies GHz. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage ...

Page 3

... NXP Semiconductors NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS ...

Page 4

... NXP Semiconductors NPN 5 GHz wideband transistor CHARACTERISTICS = 25 C (unless otherwise specified SYMBOL PARAMETER I collector leakage current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance re f transition frequency T G maximum unilateral power UM gain; note 1 F noise figure Note 1 ...

Page 5

... NXP Semiconductors NPN 5 GHz wideband transistor 120 handbook, halfpage Fig.3 DC current gain as a function of collector current; typical values (GHz  500 MHz amb Fig.5 Transition frequency as a function of collector current; typical values. 1995 Sep 18 MCD087 C re (pF (mA MHz. C MBG204 (mA) 5 Product specification 1 0 ...

Page 6

... NXP Semiconductors NPN 5 GHz wideband transistor 30 gain (dB 500 MHz. CE Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency; typical values. 1995 Sep 18 MBG202 gain (dB) MSG (mA MBG200 handbook, halfpage gain (dB) G max (MHz Product specification ...

Page 7

... NXP Semiconductors NPN 5 GHz wideband transistor 6 handbook, halfpage F (dB Fig.10 Minimum noise figure as a function of collector current; typical values. handbook, full pagewidth o 180 f = 500 MHz mA Fig.12 Common emitter noise figure circles; typical values. 1995 Sep 18 MGC901 handbook, halfpage GHz 1 GHz 500 MHz ...

Page 8

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth o 180 = 50  GHz mA Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth o 180 (1)  dB. opt min ( 3.5 dB. ( dB. ( dB. (5)  8.1 dB. ms max ( dB. ( dB  GHz mA Fig.14 Common emitter noise figure circles; typical values. ...

Page 9

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth o 180 = 50  mA Fig.15 Common emitter input reflection coefficient (s handbook, full pagewidth 180 mA Fig.16 Common emitter forward transmission coefficient (s 1995 Sep 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 o 135 135 3 GHz 40 MHz o 50 ...

Page 10

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180 mA Fig.17 Common emitter reverse transmission coefficient (s handbook, full pagewidth o 180 = 50  mA Fig.18 Common emitter output reflection coefficient (s 1995 Sep 135 3 GHz 40 MHz o 0.5 0.4 0.3 0.2 0.1 o 135 135 0.5 0.2 ...

Page 11

... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 1995 Sep scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2 ...

Page 12

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 13

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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