BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet
BFR93A,235
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BFR93A,235 Summary of contents
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DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 DISCRETE SEMICONDUCTORS 1997 Oct 29 ...
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... NXP Semiconductors NPN 6 GHz wideband transistor FEATURES High power gain Low noise figure Very low intermodulation distortion. APPLICATIONS RF wideband amplifiers and oscillators. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO I collector current (DC total power dissipation ...
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... NXP Semiconductors NPN 6 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance ...
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... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth Ω input H choke turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig ...
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... NXP Semiconductors NPN 6 GHz wideband transistor 1 handbook, halfpage C c (pF) 0.8 0.6 0.4 0 MHz Fig.5 Collector capacitance as a function of collector-base voltage; typical values. 30 handbook, halfpage gain (dB 500 MHz. CE Fig.7 Gain as a function of collector current; typical values. 1997 Oct 29 MBB252 8 handbook, halfpage ...
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... NXP Semiconductors NPN 6 GHz wideband transistor 50 handbook, halfpage gain (dB MSG mA Fig.9 Gain as a function of frequency; typical values. 40 handbook, halfpage B S (mS) 20 1.6 2 800 MHz amb Fig.11 Circles of constant noise figure; typical values. 1997 Oct 29 MBB257 handbook, halfpage G max (MHz) ...
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... NXP Semiconductors NPN 6 GHz wideband transistor 4 handbook, halfpage F (dB Fig.13 Minimum noise figure as a function of collector current; typical values. 40 handbook, halfpage d im (dB 425 mV (52.6 dBmV 793.25 MHz amb Measured in MATV test circuit (see Fig.2) Fig.15 Intermodulation distortion; typical values. ...
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... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth + j – mA amb Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA amb Fig.18 Common emitter forward transmission coefficient (S 1997 Oct 29 1 0.5 0.2 0.5 1200 1000 0.2 800 1 0 500 200 0 ...
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... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth 180 mA amb Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j – mA amb Fig.20 Common emitter output reflection coefficient (S 1997 Oct 120 o 1200 150 o 500 200 100 MHz 150 o 120 o ...
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... NXP Semiconductors NPN 6 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1997 Oct scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...