BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet - Page 5

• Manufacturer Part Number: BFR93AW,115
• Description: TRANS NPN 12V 35MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 35mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: NPN
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Noise Figure (db Typ @ F): 1.5dB @ 1GHz
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022950115::BFR93AW T/R::BFR93AW T/R

NXP Semiconductors
1995 Sep 18
handbook, halfpage
NPN 5 GHz wideband transistor
V
V
(GHz)
CE
CE
Fig.3
h FE
f T
= 5 V.
= 5 V; f = 500 MHz; T
120
Fig.5
80
40
6
4
0
0
2
1
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function
of collector current; typical values.
10
amb
= 25 C.
10
20
I C (mA)
I
C
(mA)
MBG204
MCD087
10
30
2
5
I
C
(pF)
C re
= 0; f = 1 MHz.
Fig.4
0.8
0.6
0.4
0.2
1
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
4
8
Product specification
12
BFR93AW
V CB (V)
MBG203
16