BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet

TRANS NPN 35MA 12V 6GHZ SOT23

BFR93A,215

Manufacturer Part Number
BFR93A,215
Description
TRANS NPN 35MA 12V 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR93A,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
90
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
6 GHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Number Of Elements
1
Collector-emitter Voltage
12V
Collector-base Voltage
15V
Emitter-base Voltage
2V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
40
Frequency (max)
6GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1651-2
933551570215
BFR93A T/R
Product specification
Supersedes data of September 1995
DATA SHEET
BFR93A
NPN 6 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1997 Oct 29

Related parts for BFR93A,215

BFR93A,215 Summary of contents

Page 1

DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 DISCRETE SEMICONDUCTORS 1997 Oct 29 ...

Page 2

... NXP Semiconductors NPN 6 GHz wideband transistor FEATURES  High power gain  Low noise figure  Very low intermodulation distortion. APPLICATIONS  RF wideband amplifiers and oscillators. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO I collector current (DC total power dissipation ...

Page 3

... NXP Semiconductors NPN 6 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C collector capacitance ...

Page 4

... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth Ω input H choke turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig ...

Page 5

... NXP Semiconductors NPN 6 GHz wideband transistor 1 handbook, halfpage C c (pF) 0.8 0.6 0.4 0  MHz Fig.5 Collector capacitance as a function of collector-base voltage; typical values. 30 handbook, halfpage gain (dB 500 MHz. CE Fig.7 Gain as a function of collector current; typical values. 1997 Oct 29 MBB252 8 handbook, halfpage ...

Page 6

... NXP Semiconductors NPN 6 GHz wideband transistor 50 handbook, halfpage gain (dB MSG mA Fig.9 Gain as a function of frequency; typical values. 40 handbook, halfpage B S (mS) 20 1.6 2 800 MHz amb Fig.11 Circles of constant noise figure; typical values. 1997 Oct 29 MBB257 handbook, halfpage G max (MHz) ...

Page 7

... NXP Semiconductors NPN 6 GHz wideband transistor 4 handbook, halfpage F (dB Fig.13 Minimum noise figure as a function of collector current; typical values. 40 handbook, halfpage d im (dB 425 mV (52.6 dBmV   793.25 MHz amb Measured in MATV test circuit (see Fig.2) Fig.15 Intermodulation distortion; typical values. ...

Page 8

... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth + j –  mA amb Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180  mA amb Fig.18 Common emitter forward transmission coefficient (S 1997 Oct 29 1 0.5 0.2 0.5 1200 1000 0.2 800 1 0 500 200 0 ...

Page 9

... NXP Semiconductors NPN 6 GHz wideband transistor handbook, full pagewidth 180  mA amb Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j –  mA amb Fig.20 Common emitter output reflection coefficient (S 1997 Oct 120 o 1200 150 o 500 200 100 MHz 150 o 120 o ...

Page 10

... NXP Semiconductors NPN 6 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1997 Oct scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 11

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 12

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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