BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet - Page 6

• Manufacturer Part Number: BFR93AW,115
• Description: TRANS NPN 12V 35MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 35mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: NPN
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Noise Figure (db Typ @ F): 1.5dB @ 1GHz
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022950115::BFR93AW T/R::BFR93AW T/R

NXP Semiconductors
1995 Sep 18
handbook, halfpage
NPN 5 GHz wideband transistor
V
V
CE
CE
gain
(dB)
gain
(dB)
= 8 V; f = 500 MHz.
Fig.6
= 8 V; I
30
20
10
50
40
30
20
10
0
0
Fig.8
10
0
C
G UM
= 10 mA.
Gain as a function of collector current;
typical values.
MSG
Gain as a function of frequency;
typical values.
10
10
2
10
20
3
MSG
G UM
I C (mA)
f (MHz)
G max
MBG202
MBG200
10
30
4
6
handbook, halfpage
V
V
CE
CE
gain
(dB)
gain
(dB)
Fig.7
= 8 V; f = 1 GHz.
= 8 V; I
50
30
20
10
40
30
20
10
0
0
10
Fig.9
0
C
G UM
= 30 mA.
Gain as a function of collector current;
typical values.
MSG
Gain as a function of frequency;
typical values.
10
10
2
10
20
3
Product specification
G UM
MSG
BFR93AW
f (MHz)
I C (mA)
G max
MBG201
MBG207
10
30
4