MMBT918 Fairchild Semiconductor, MMBT918 Datasheet - Page 6

• Manufacturer Part Number: MMBT918
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT918

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 600 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 @ 3 mA @ 1 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Common Emitter Y Parameters vs. Frequency
Collector Current-Input Short Circuit
5
4
3
2
1
0
0.08
0.06
0.04
0.02
1.6
1.2
0.8
0.4
10
0.1
2
0
Reverse Transfer Admittance vs
Reverse Transfer Admittance vs
0
I = 5.0 mA
V
Output Admittance vs Collector
0
c
0
Frequency-Input Short Circuit
CE
g
b
= 10V
Current-Input Short Circuit
oe
oe
20
I - COLLECTOR CURRENT (mA)
-b
-g
I - COLLECTOR CURRENT (mA)
C
C
2
2
re
re
f - FREQUENCY (MHz)
50
4
4
100
6
6
200
V = 10V
CE
V = 10V
CE
V = 5.0V
V = 5.0V
f = 10.7 MHz
V = 10V
-g
f = 100 MHz
CE
CE
CE
-b
8
re
8
re
500
1000
10
10
Collector Current-Input Short Circuit
0.05
0.02
0.01
10
0.25
0.15
0.05
0.5
0.2
0.1
8
6
4
2
0
0.3
0.2
0.1
10
1
Reverse Transfer Admittance vs
0
Output Admittance vs Collector
0
I = 5.0 mA
V
0
Frequency-Input Short Circuit
c
CE
f = 10.7 MHz
V = 10V
Current-Input Short Circuit
-b
= 10V
CE
re
20
Output Admittance vs
(continued)
I - COLLECTOR CURRENT (mA)
-g
I - COLLECTOR CURRENT (mA)
C
C
2
V = 5.0V
2
re
CE
V = 10V
f - FREQUENCY (MHz)
CE
50
4
4
V = 5.0V
NPN RF Transistor
CE
b
100
oe
6
6
200
f = 100 MHz
V = 10V
CE
8
8
g
500
b
g
(continued)
oe
oe
oe
1000
10
10