MMBT918 Fairchild Semiconductor, MMBT918 Datasheet - Page 2

• Manufacturer Part Number: MMBT918
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT918

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 600 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 @ 3 mA @ 1 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SMALL SIGNAL CHARACTERISTICS
FUNCTIONAL TEST
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
V
V
I
h
V
V
f
C
C
NF
G
P
Symbol
CBO
T
FE
CEO(
(BR)CBO
(BR)EBO
CE(
BE(
obo
ibo
O
pe
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
sus
)
)
)
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Amplifier Power Gain
Power Output
Collector Efficiency
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
f = 100 MHz
V
V
V
I
R
V
f = 200 MHz
V
f = 500 MHz
V
f = 500 MHz
I
C
C
E
C
C
C
C
C
CB
CB
CB
CB
BE
CB
CB
CB
G
= 3.0 mA, I
= 1.0 A, I
= 10 A, I
= 3.0 mA, V
= 10 mA, I
= 10 mA, I
= 4.0 mA, V
= 1.0 mA, V
= 400 , f = 60 MHz
= 15 V, I
= 15 V, T
= 10 V, I
= 0, I
= 0.5 V, I
= 12 V, I
= 15 V, I
= 15 V, I
Test Conditions
E
= 0, f = 1.0 MHz
C
E
B
B
E
C
C
E
C
B
C
A
= 0
CE
= 1.0 mA
= 1.0 mA
CE
= 0, f = 1.0 MHz
CE
= 0
= 6.0 mA,
= 8.0 mA,
= 0
= 8.0 mA,
= 0
= 0, f = 1.0 MHz
= 150 C
= 1.0 V
= 10 V,
= 6.0 V,
Min
NPN RF Transistor
600
3.0
15
30
20
15
30
25
Max
0.01
1.0
0.4
1.0
1.7
3.0
2.0
6.0
(continued)
Units
MHz
mW
pF
pF
pF
dB
dB
%
V
V
V
V
V
A
A