BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet - Page 8

• Manufacturer Part Number: BFP 540 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 540 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 20mA @ 3.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 30000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 540 E6327; BFP540E6327INTR; BFP540E6327XT; SP000012602

Source impedance for min.
noise figure vs. frequency
V
CE
= 2V, I
0
+j10
-j10
C
+j25
10
-j25
= 5mA / 20mA
5GHz
4GHz
3GHz
25
6GHz
2.4GHz
1.8GHz
50
+j50
-j50
100
5mA
20mA
0.9GHz
+j100
-j100
8
2009-12-04
BFP540