BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet - Page 2

• Manufacturer Part Number: BFP 540 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 540 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 20mA @ 3.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 30000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 540 E6327; BFP540E6327INTR; BFP540E6327XT; SP000012602

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 14 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 3.5 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
50
-
-
-
Values
Value
≤ 290
typ.
110
5
-
-
-
max.
2009-12-04
100
185
10
10
-
BFP540
Unit
V
µA
nA
µA
-
Unit
K/W