BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 540 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 540 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 20mA @ 3.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 30000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 540 E6327; BFP540E6327INTR; BFP540E6327XT; SP000012602

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
300
200
150
100
50
0
1
0
10
0
/P
-7
totDC
20
10
-6
= ƒ (t
40
10
-5
p
60
)
10
-4
80
10
tot
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
100
= ƒ (T
10
-2
120 °C
S
)
T
t
s
p
S
150
10
0
5
Permissible Pulse Load R
Collector-base capacitance C
f = 1MHz
K/W
0.05
10
10
10
pF
0.2
0.1
0
3
2
1
10
0
-7
0.5
10
-6
1
10
-5
1.5
10
-4
2
10
thJS
2.5
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
2009-12-04
10
cb
= ƒ (t
3
-2
= ƒ (V
BFP540
V
t
V
p
s
p
)
CB
CB
10
4
)
0